Implantation profiles
A typical application of SIMS analysis is depth profiling of ions implantation. It allows to check the implanted dose in a sample or match 2 ion implanters.
Beside, an example of implantation of 11B in a silicon matrix. This technique gives an excellent depth resolution and low detection limits.
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Thin structures analysis
Analyses of sample exhibiting thin structure (or shallow junctions) becomes more and more important.
Impact energy reduction allows very good depth resolutions (~1nm) with good detection limits.
Distributed Bragg Reflectors
Bragg reflectors analysis with secondary ion mass spectrometry allows the determination of composition, thickness and diffusion of major elements and impurities for each layer.